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BD179G

BD179G

BD179G

ON Semiconductor

BD179G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD179G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Contact PlatingTin
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingBulk
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation30W
Peak Reflow Temperature (Cel) 260
Current Rating3A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BD179
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation30W
Transistor Application AMPLIFIER
Gain Bandwidth Product3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 800mV @ 100mA, 1A
Collector Emitter Breakdown Voltage80V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage800mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 63
Height 6.35mm
Length 31.75mm
Width 6.35mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:10036 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.63000$0.63
10$0.54100$5.41
100$0.40370$40.37
500$0.31716$158.58

BD179G Product Details

BD179G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 63 @ 150mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 800mV @ 100mA, 1A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Its current rating is 3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.3MHz is present in the transition frequency.The maximum collector current is 3A volts.

BD179G Features


the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz

BD179G Applications


There are a lot of ON Semiconductor BD179G applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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