DSS5320T-7 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 1A 2V.As it features a collector emitter saturation voltage of -70mV, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 300mA, 3A.Continuous collector voltages of -3A should be maintained to achieve high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.180MHz is present in the transition frequency.There is a breakdown input voltage of 20V volts that it can take.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
DSS5320T-7 Features
the DC current gain for this device is 200 @ 1A 2V
a collector emitter saturation voltage of -70mV
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at -5V
a transition frequency of 180MHz
DSS5320T-7 Applications
There are a lot of Diodes Incorporated DSS5320T-7 applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
