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ZXTN2007GTA

ZXTN2007GTA

ZXTN2007GTA

Diodes Incorporated

ZXTN2007GTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTN2007GTA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated DC 30V
Max Power Dissipation3W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating7A
Frequency 140MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTN2007
Pin Count4
Number of Elements 1
Element ConfigurationSingle
Power Dissipation3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product140MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 7A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 220mV @ 300mA, 6.5A
Collector Emitter Breakdown Voltage30V
Transition Frequency 140MHz
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current 7A
Height 1.65mm
Length 6.7mm
Width 3.7mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:8404 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.977520$0.97752
10$0.922189$9.22189
100$0.869989$86.9989
500$0.820745$410.3725
1000$0.774287$774.287

ZXTN2007GTA Product Details

ZXTN2007GTA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1A 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 220mV @ 300mA, 6.5A.Continuous collector voltage should be kept at 7A for high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.The current rating of this fuse is 7A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 140MHz.An input voltage of 30V volts is the breakdown voltage.Collector current can be as low as 7A volts at its maximum.

ZXTN2007GTA Features


the DC current gain for this device is 100 @ 1A 1V
the vce saturation(Max) is 220mV @ 300mA, 6.5A
the emitter base voltage is kept at 7V
the current rating of this device is 7A
a transition frequency of 140MHz

ZXTN2007GTA Applications


There are a lot of Diodes Incorporated ZXTN2007GTA applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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