BC858BWT106 Overview
In this device, the DC current gain is 210 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of -600mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor is recommended to keep the continuous collector voltage at -100mA in order to achieve high efficiency.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -100mA.The part has a transition frequency of 250MHz.When collector current reaches its maximum, it can reach 100mA volts.
BC858BWT106 Features
the DC current gain for this device is 210 @ 2mA 5V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 250MHz
BC858BWT106 Applications
There are a lot of ROHM Semiconductor BC858BWT106 applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
