Name: MJD122T4G
Brand: ON Semiconductor
SKU: MJD122T4G
Price: 0.79000 USD
Availability: InStock

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MJD122T4G

Manufacturer part number:MJD122T4G

Manufacturer:ON Semiconductor

Description:MJD122T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MJD122T4G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	Other Transistors
Voltage - Rated DC	100V
Max Power Dissipation	1.75W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	8A
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	MJD122
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	20W
Case Connection	COLLECTOR
Transistor Application	SWITCHING
Halogen Free	Halogen Free
Transistor Type	NPN - Darlington
Collector Emitter Voltage (VCEO)	100V
Max Collector Current	8A
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 4A 4V
Current - Collector Cutoff (Max)	10μA
Vce Saturation (Max) @ Ib, Ic	4V @ 80mA, 8A
Collector Emitter Breakdown Voltage	100V
Transition Frequency	4MHz
Collector Emitter Saturation Voltage	2V
Max Breakdown Voltage	100V
Frequency - Transition	4MHz
Collector Base Voltage (VCBO)	100V
Emitter Base Voltage (VEBO)	5V
Continuous Collector Current	8A
Height	2.38mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

MJD122T4G Product Details

MJD122T4G Description

The MJD122T4G is an 8A NPN bipolar power Darlington Transistor is designed for general-purpose amplifier and low-speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices. It is the surface-mount replacement for the 2N6040 to 2N6045 series, TIP120 to TIP122 series, and TIP125 to TIP127 series.

MJD122T4G Features

Epoxy Meets UL 94 V?0 @ 0.125 in High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc
Lead Formed for Surface Mount Applications in Plastic Sleeves
Surface Mount Replacements for 2N6040?2N6045 Series, TIP120?TIP122 Series, and TIP125?TIP127 Series
Monolithic Construction With Built?in Base?Emitter Shunt Resistors
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant