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DMNH6011LK3Q-13

DMNH6011LK3Q-13

DMNH6011LK3Q-13

Diodes Incorporated

MOSFET BVDSS: 41V-60V TO252 T&R

SOT-23

DMNH6011LK3Q-13 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 17 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Reach Compliance Code not_compliant
Power Dissipation-Max 1.6W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3077pF @ 30V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 49.1nC @ 10V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±12V
RoHS StatusROHS3 Compliant
In-Stock:10206 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About DMNH6011LK3Q-13

The DMNH6011LK3Q-13 from Diodes Incorporated is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET BVDSS: 41V-60V TO252 T&R.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the DMNH6011LK3Q-13, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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