Name: AUIRFR120Z
Brand: Infineon Technologies
SKU: AUIRFR120Z
Price: 0.48000 USD
Availability: InStock

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AUIRFR120Z

Manufacturer part number:AUIRFR120Z

Manufacturer:Infineon Technologies

Description:AUIRFR120Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRFR120Z Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	190MOhm
Additional Feature	AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	35W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	35W
Case Connection	DRAIN
Turn On Delay Time	8.3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	190m Ω @ 5.2A, 10V
Vgs(th) (Max) @ Id	4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	310pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8.7A Tc
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V
Rise Time	26ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	8.7A
Threshold Voltage	2V
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Avalanche Energy Rating (Eas)	20 mJ
Nominal Vgs	2 V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

AUIRFR120Z Product Details

AUIRFR120Z Description

AUIRFR120Z, developed by Infineon Technologies, is a type of HEXFET? power MOSFET specifically designed for automotive applications. Low on-resistance per silicon area can be realized based on advanced processing techniques. High flexibility and reliability can be ensured based on its fast switching speed, ruggedized device design, and logic-level gate drive.