C3M0065100K Description
Power MOSFET made of silicon carbide
C3M0065100K Features
• brand-new SiC MOSFET C3MTM technology
• Package optimization and separate driver source pin
• The creepage distance between the source and drain is 8 mm.
• Low on-resistance and high blocking voltage
• Low capacitance switching at high speeds
• Low reverse recovery, fast intrinsic diode (Qrr)
• RoHS-compliant and halogen-free
C3M0065100K Applications
• rechargers for EV batteries and renewable energy
• DC/DC converters with high voltage
• Power Supplies with a Switch Mode
