Name: FDA8440
Brand: ON Semiconductor
SKU: FDA8440
Price: 3.98000 USD
Availability: InStock

new-10%

FDA8440

Manufacturer part number:FDA8440

Manufacturer:ON Semiconductor

Description:FDA8440 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDA8440 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	6.401g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	306W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	306W
Turn On Delay Time	43 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.1m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	24740pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	450nC @ 10V
Rise Time	130ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	290 ns
Turn-Off Delay Time	435 ns
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Pulsed Drain Current-Max (IDM)	500A
RoHS Status	ROHS3 Compliant

FDA8440 Product Details

FDA8440 Description

N-Channel Logic Level PowerTrench? MOSFET 40 V, 10 A, 2.1 mΩ The latest shielded gate PowerTrench? MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.