NSVBC850CLT1G Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.A maximum collector current of 100mA volts is possible.
NSVBC850CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
NSVBC850CLT1G Applications
There are a lot of ON Semiconductor NSVBC850CLT1G applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
