BCP5216TA Overview
DC current gain in this device equals 100 @ 150mA 2V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Single BJT transistor can be broken down at a voltage of 60V volts.Maximum collector currents can be below 1A volts.
BCP5216TA Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCP5216TA Applications
There are a lot of Diodes Incorporated BCP5216TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
