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CP336V-2N5551-CT20

CP336V-2N5551-CT20

CP336V-2N5551-CT20

Central Semiconductor Corp

CP336V-2N5551-CT20 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

CP336V-2N5551-CT20 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature-65°C~150°C TJ
PackagingTray
Published 2013
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Transistor Type NPN
Collector Emitter Voltage (VCEO) 200mV
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage160V
Voltage - Collector Emitter Breakdown (Max) 160V
Current - Collector (Ic) (Max) 600mA
Frequency - Transition 300MHz
RoHS StatusROHS3 Compliant
In-Stock:2811 items

CP336V-2N5551-CT20 Product Details

CP336V-2N5551-CT20 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 10mA 5V.A VCE saturation (Max) of 200mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Product comes in the supplier's device package Die.This device displays a 160V maximum voltage - Collector Emitter Breakdown.A maximum collector current of 600mA volts is possible.

CP336V-2N5551-CT20 Features


the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
the supplier device package of Die

CP336V-2N5551-CT20 Applications


There are a lot of Central Semiconductor Corp CP336V-2N5551-CT20 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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