CP336V-2N5551-CT20 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 10mA 5V.A VCE saturation (Max) of 200mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).Product comes in the supplier's device package Die.This device displays a 160V maximum voltage - Collector Emitter Breakdown.A maximum collector current of 600mA volts is possible.
CP336V-2N5551-CT20 Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
the supplier device package of Die
CP336V-2N5551-CT20 Applications
There are a lot of Central Semiconductor Corp CP336V-2N5551-CT20 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting