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2N4398

2N4398

2N4398

Central Semiconductor

1 Elements 2 Terminations SILICON TO-3

SOT-23

2N4398 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Through Hole
Package / Case TO-3
Transistor Element Material SILICON
Published 2012
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.29.00.95
Subcategory Other Transistors
Terminal Position BOTTOM
Terminal FormPIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count2
JESD-30 Code O-MBFM-P2
Qualification StatusNot Qualified
Operating Temperature (Max) 175°C
Number of Elements 1
Polarity PNP
Configuration SINGLE
Power Dissipation-Max 5W
Case Connection COLLECTOR
Gain Bandwidth Product4MHz
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 30A
Collector Emitter Breakdown Voltage40V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage4V
Frequency - Transition 4MHz
Collector Base Voltage (VCBO) 40V
hFE Min 15
DC Current Gain-Min (hFE) 15
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1768 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$10.51000$10.51
20$9.45950$189.19
40$8.61850$344.74
100$7.77780$777.78
260$7.14715$1858.259
500$6.51652$3258.26

2N4398 Product Details

2N4398 Overview


This system offers maximum design flexibility due to a collector emitter saturation voltage of 4V.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.

2N4398 Features


a collector emitter saturation voltage of 4V
a transition frequency of 4MHz


2N4398 Applications


There are a lot of Central Semiconductor
2N4398 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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