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BC237G

BC237G

BC237G

ON Semiconductor

BC237G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC237G Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status OBSOLETE (Last Updated: 23 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 45V
Max Power Dissipation350mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating100mA
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC237
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Transistor Application AMPLIFIER
Gain Bandwidth Product200MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 380 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage45V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage200mV
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
hFE Min 120
Continuous Collector Current 100mA
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:75366 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.09000$0.09
500$0.0891$44.55
1000$0.0882$88.2
1500$0.0873$130.95
2000$0.0864$172.8
2500$0.0855$213.75

BC237G Product Details

BC237G Overview


In this device, the DC current gain is 380 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 100mA for high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.Parts of this part have transition frequencies of 200MHz.When collector current reaches its maximum, it can reach 100mA volts.

BC237G Features


the DC current gain for this device is 380 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 200MHz

BC237G Applications


There are a lot of ON Semiconductor BC237G applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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