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2SD2153T100U

2SD2153T100U

2SD2153T100U

ROHM Semiconductor

2SD2153T100U datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SD2153T100U Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 13 Weeks
Contact PlatingCopper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2014
JESD-609 Code e2
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
HTS Code8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 25V
Max Power Dissipation2W
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Current Rating2A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD2153
Pin Count3
JESD-30 Code R-PSSO-F3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product110MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 820 @ 500mA 6V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 20mA, 1A
Collector Emitter Breakdown Voltage25V
Transition Frequency 110MHz
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 6V
hFE Min 560
Continuous Collector Current 2A
VCEsat-Max 0.5 V
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:13449 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.235596$0.235596
10$0.222261$2.22261
100$0.209680$20.968
500$0.197811$98.9055
1000$0.186614$186.614

2SD2153T100U Product Details

2SD2153T100U Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 820 @ 500mA 6V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 20mA, 1A.For high efficiency, the continuous collector voltage must be kept at 2A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).In the part, the transition frequency is 110MHz.There is a breakdown input voltage of 25V volts that it can take.A maximum collector current of 2A volts can be achieved.

2SD2153T100U Features


the DC current gain for this device is 820 @ 500mA 6V
the vce saturation(Max) is 500mV @ 20mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 110MHz

2SD2153T100U Applications


There are a lot of ROHM Semiconductor 2SD2153T100U applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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