2SD1803T-TL-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 500mA 2V.A collector emitter saturation voltage of 400mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 150mA, 3A.Keeping the emitter base voltage at 6V can result in a high level of efficiency.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
2SD1803T-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 150mA, 3A
the emitter base voltage is kept at 6V
2SD1803T-TL-E Applications
There are a lot of ON Semiconductor 2SD1803T-TL-E applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
