Name: SUM110N06-3M4L-E3
Brand: Vishay Siliconix
SKU: SUM110N06-3M4L-E3
Availability: InStock

new-10%

SUM110N06-3M4L-E3

Manufacturer part number:SUM110N06-3M4L-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 60V 110A D2PAK

Case Package:SOT-23

Datasheet:SUM110N06-3M4L-E3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Cut Tape (CT)
Published	2017
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	3.4mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.75W Ta 375W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	375W
Case Connection	DRAIN
Turn On Delay Time	22 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	12900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	110A Tc
Gate Charge (Qg) (Max) @ Vgs	300nC @ 10V
Rise Time	130ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	280 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	110A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	440A
Avalanche Energy Rating (Eas)	280 mJ
Height	4.83mm
Length	10.41mm
Width	9.65mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

About SUM110N06-3M4L-E3

The SUM110N06-3M4L-E3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 60V 110A D2PAK.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SUM110N06-3M4L-E3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.