IRF3000 Description
IRF3000 is a 300V N-MOSFET HEXFET MOSFET. The IRF3000 can replace electromechanical relays in many telecommunications and networking applications. As it is a solid-state semiconductor device with no mechanical parts, it increases the reliability of the entire system while being 30% smaller than an electromechanical relay.
The IRF3000 is more efficient than electromechanical relays, with an open-state resistance 90% lower than electromechanical relays, minimizing conduction losses. The ultra-low gate charge in turn minimizes switching losses. The IRF3000 is easier to drive than an electromechanical relay, simplifying the circuit and reducing system costs.
IRF3000 Features
Type Designator: IRF3000
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 300 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 1.6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 7.2 nS
Drain-Source Capacitance (Cd): 940 pF
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
Package: SO8
IRF3000 Applications
