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NTB30N06LT4G

NTB30N06LT4G

NTB30N06LT4G

ON Semiconductor

MOSFET N-CH 60V 30A D2PAK

SOT-23

NTB30N06LT4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating30A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 88.2W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation88.2W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 46m Ω @ 15A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Ta
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Rise Time200ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 62 ns
Turn-Off Delay Time 15.6 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 15V
Drain-source On Resistance-Max 0.046Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 90A
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1423 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.349699$0.349699
10$0.329904$3.29904
100$0.311230$31.123
500$0.293613$146.8065
1000$0.276994$276.994

About NTB30N06LT4G

The NTB30N06LT4G from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 60V 30A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the NTB30N06LT4G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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