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SUD50N04-8M8P-4GE3

SUD50N04-8M8P-4GE3

SUD50N04-8M8P-4GE3

Vishay Siliconix

MOSFET 40V 50A 48.1W 8.8mohm @ 10V

SOT-23

SUD50N04-8M8P-4GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 8.8mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Pin Count4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 48.1W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation48.1W
Case Connection DRAIN
Turn On Delay Time30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 20V
Current - Continuous Drain (Id) @ 25°C 14A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Rise Time15ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 14A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 50A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 45 mJ
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:5541 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About SUD50N04-8M8P-4GE3

The SUD50N04-8M8P-4GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 40V 50A 48.1W 8.8mohm @ 10V.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SUD50N04-8M8P-4GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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