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IPB65R225C7ATMA2

IPB65R225C7ATMA2

IPB65R225C7ATMA2

Infineon Technologies

MOSFET N-CH 650V 11A TO-263-3

SOT-23

IPB65R225C7ATMA2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series CoolMOS™ C7
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 63W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 225m Ω @ 4.8A, 10V
Vgs(th) (Max) @ Id 4V @ 240μA
Input Capacitance (Ciss) (Max) @ Vds 996pF @ 400V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusROHS3 Compliant
In-Stock:4098 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About IPB65R225C7ATMA2

The IPB65R225C7ATMA2 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 650V 11A TO-263-3.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPB65R225C7ATMA2, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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