NVR5198NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NVR5198NLT1G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Pin Count
3
Number of Channels
1
Power Dissipation-Max
900mW Ta
Element Configuration
Single
Power Dissipation
1.5W
Turn On Delay Time
5 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
155m Ω @ 1A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
182pF @ 25V
Current - Continuous Drain (Id) @ 25°C
1.7A Ta
Gate Charge (Qg) (Max) @ Vgs
5.1nC @ 10V
Rise Time
7ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
2 ns
Turn-Off Delay Time
13 ns
Continuous Drain Current (ID)
2.2A
Threshold Voltage
2.5V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:13327 items
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Unit Price
Ext. Price
NVR5198NLT1G Product Details
NVR5198NLT1G Description
NVR5198NLT1G is a type of N-channel logic-level power MOSFET provided by ON Semiconductor. It is able to minimize RDS (on) for low conduction losses and improved efficiency. It is available in the industry-standard surface-mount SOT?23 package for the purpose of space-saving.
NVR5198NLT1G Features
Low RDS(on)
Low conduction losses
Improved efficiency
Available in the SOT?23 package
NVR5198NLT1G Applications
Uninterruptible power supplies
Synchronous rectification
Switching applications
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