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SQM120N02-1M3L_GE3

SQM120N02-1M3L_GE3

SQM120N02-1M3L_GE3

Vishay Siliconix

Automotive N-Channel 20 V (D-S) 175 °C MOSFET

SOT-23

SQM120N02-1M3L_GE3 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263 (D2Pak)
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Series Automotive, AEC-Q101, TrenchFET®
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 375W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 14500pF @ 10V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 290nC @ 10V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
In-Stock:2146 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$12.920005$12.920005
10$12.188684$121.88684
100$11.498758$1149.8758
500$10.847885$5423.9425
1000$10.233854$10233.854

About SQM120N02-1M3L_GE3

The SQM120N02-1M3L_GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features Automotive N-Channel 20 V (D-S) 175 °C MOSFET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SQM120N02-1M3L_GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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