FQA7N80C-F109 Description
The planar stripe and DMOS technologies exclusive to ON Semiconductor were used to create this N-Channel enhancement mode power MOSFET. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. Switched mode power supply, active power factor correction (PFC), and electronic lamp ballasts are all compatible with these products.
FQA7N80C-F109 Features
7.0 A, 800 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.5 A
Low Gate Charge (Typ. 27nC)
Low Crss (Typ. 10pF)
100% Avalanche Tested
RoHS Compliant
FQA7N80C-F109 Applications
Temperature Measurement
Pressure Measurement
Flow Meters
Factory Automation and Process Control
