STF6N80K5 Description
Utilizing MDmeshTM K5 technology, STF6N80K5 high voltage N-channel Power MOSFETs are created using a novel, patented vertical structure. As a result, on-resistance is drastically reduced, and ultra-low gate charges are produced for applications demanding a high level of efficiency and higher power density.
STF6N80K5 Features
STF6N80K5 Applications
Automotive
Personal electronics
Communications equipment