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SIZ710DT-T1-GE3

SIZ710DT-T1-GE3

SIZ710DT-T1-GE3

Vishay Siliconix

MOSFET 20V 16A / 35A N-CH MOSFET

SOT-23

SIZ710DT-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-PowerPair™
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingDigi-Reel®
Published 2018
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 6.8mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation48W
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number SIZ710
Pin Count6
Qualification StatusNot Qualified
Number of Elements 2
Number of Channels 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation4.6W
Case Connection DRAIN
Power - Max 27W 48W
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.8m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 820pF @ 10V
Current - Continuous Drain (Id) @ 25°C 16A 35A
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time15ns
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 16A
Threshold Voltage 2.2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 35A
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 70A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 2.2 V
Height 750μm
Length 6mm
Width 3.73mm
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4147 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.582576$0.582576
10$0.549600$5.496
100$0.518491$51.8491
500$0.489142$244.571
1000$0.461455$461.455

About SIZ710DT-T1-GE3

The SIZ710DT-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 20V 16A / 35A N-CH MOSFET.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SIZ710DT-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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