IRF7317TRPBF Description
The fifth generation HEXFET of the International Rectifier Company adopts advanced technology to achieve a very low switching quantity per unit area. This benefit. Combined with the fast switching speed and rugged device design of HExFET Power MOSFET, HExFET Power MOSFET provides designers with an extremely reliable device that can be used in a variety of applications.
SO-8 has been improved by customizing lead frames to enhance thermal and multi-chip capabilities, making it ideal for power applications. With these improvements, a variety of devices can be used in applications that significantly reduce circuit board space. The package is designed for vapor phase interior or wave soldering technology.
IRF7317TRPBF Features
Generation VTechnology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
Lead-Free
IRF7317TRPBF Applications
HExFET Power MOSFET provides designers with an extremely reliable device that can be used in a variety of applications.
