STL7DN6LF3 Description
The device is a double N channel power MOSFET developed by STripFET F3 technology. It aims to minimize on-resistance and gate charge to provide excellent switching performance.
STL7DN6LF3 Features
? Designed for automotive application and
AEC-Q101 qualified
? Logic level VGS(th)
? 175 ??C junction temperature
? 100% avalanche rated
? Wettable flank package
STL7DN6LF3 Applications
? Switching applications
