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SIS903DN-T1-GE3

SIS903DN-T1-GE3

SIS903DN-T1-GE3

Vishay Siliconix

VISHAY - SIS903DN-T1-GE3 - Dual MOSFET, Dual P Channel, -6 A, -20 V, 0.0167 ohm, -4.5 V, -1 V

SOT-23

SIS903DN-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8 Dual
Supplier Device Package PowerPAK® 1212-8 Dual
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series TrenchFET® Gen III
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 2.6W Ta 23W Tc
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 20.1mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2565pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Drain to Source Voltage (Vdss) 20V
FET Feature Standard
RoHS StatusROHS3 Compliant
In-Stock:7269 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About SIS903DN-T1-GE3

The SIS903DN-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features VISHAY - SIS903DN-T1-GE3 - Dual MOSFET, Dual P Channel, -6 A, -20 V, 0.0167 ohm, -4.5 V, -1 V.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SIS903DN-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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