FDMS9620S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website
SOT-23
FDMS9620S Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Number of Pins
8
Weight
228mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
Series
PowerTrench®
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
32MOhm
Terminal Finish
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory
FET General Purpose Power
Max Power Dissipation
2.5W
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Case Connection
DRAIN
Power - Max
1W
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
21.5m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
665pF @ 15V
Current - Continuous Drain (Id) @ 25°C
7.5A 10A
Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V
Rise Time
13ns
Fall Time (Typ)
7 ns
Turn-Off Delay Time
27 ns
Continuous Drain Current (ID)
10A
Threshold Voltage
1.6V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
7.5A
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
60A
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Height
750μm
Length
5mm
Width
6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:5467 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FDMS9620S Product Details
FDMS9620S Description
This device features a customized dual Power 56 package that houses two specialized MOSFETs. It is intended to deliver the most effective Synchronous Buck power stage possible in terms of PCB consumption and efficiency. A Low Conduction Loss "Low Side" SyncFET is used in conjunction with a Low Switching Loss "High Side" MOSFET.
FDMS9620S Features
Maximum rDS(on) at VGS = 4.5V and lD = 8.?ê is 17mQ.
MoSFET with a high side of Qg
MOSFET with a low rDs(on)low side
Thermostatic dual Power 56 package
Pinout streamlined for easy PCB design
REACH Compliant
FDMS9620S Applications
For use with synchronized buck converter
Power of the Notebook
Point of Load for General Purpose
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