Name: SIS488DN-T1-GE3
Brand: Vishay Siliconix
SKU: SIS488DN-T1-GE3
Price: 1.02000 USD
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET®
Published	2015
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	5.5mOhm
Terminal Position	DUAL
Terminal Form	C BEND
JESD-30 Code	S-PDSO-C5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.7W Ta 52W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	22 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1330pF @ 20V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Rise Time	65ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	40A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Avalanche Energy Rating (Eas)	20 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

SIS488DN-T1-GE3 Product Details

SIS488DN-T1-GE3 Description

A dual N-channel MOSFET transistor from Vishay Siliconix, the SIS488DN-T1-GE3, is made for a variety of uses, including power management and DC-DC converters. It is ideal for use in high-efficiency power conversion systems due to its low on-resistance, large current capacity, and quick switching rates. Because of its small size and surface-mount packaging, the SIS488DN-T1-GE3 is simple to include into a number of circuit designs. It is a member of Vishay's PowerPAK family of MOSFETs, which are designed for excellent thermal performance and great power density.