FDMT80060DC Description
Fairchild Semiconductor's sophisticated PowerTrench? technology is used to make the FDMT80060DC. With extremely low Junction-to-Ambient thermal resistance, advances in both silicon and Dual CoolTM packaging technologies have been coupled to give the lowest rDS(on) while preserving good switching performance.
FDMT80060DC Features
At VGS = 10 V, ID = 43 A, the maximum rDs(on) is 1.1 mQ.
At Vgs = 8 V, Id = 37 A, MaxDs(on)= 1.3 mQ.
Combination of advanced package and silicon for low rDS(on) and high efficiency
Engineered for gentle r ecovery, next generation enhanced body diode technology
8x8 mm MLP package with low profile
MSL1 is a strong package design.
UIL was tested to the nth degree.
RoHS (Restriction of Hazardous Substances) Compliant
FDMT80060DC Applications
Load Switching / OringFET
Synchronous Rectification
DC-DC Convergence
