BSC010N04LSATMA1 Description
This BSC010N04LSATMA1 MOSFET operates at 40V and is optimized for synchronous rectifying. With this MOSFET, you get the lowest RDS (on) and the perfect switching behavior for applications that require fast switching.
By using thin wafer technology, we have achieved a 15% lower RDS (on) and a 31% lower Figure of Merit (RDS (on) x Qg) when compared to alternative devices. It is possible to achieve high system efficiency and power density by dramatically reducing gate and output charges. The OptiMOSTM power MOSFET is well suited to high-frequency switching and DC-DC conversion applications.
BSC010N04LSATMA1 Features
100%avalanchetested
Superiorthermalresistance
N-channel,logic level
Optimizedforsychronousrectification
Verylowon-resistance(on)
QualifiedaccordingtoJEDEC1)for target applications
Pb-freeleadplating;RoHS-compliant
Halogen-freeaccordingtoIEC61249-2-21
Highersolderjointreliabilityduetoenlargedsourceinterconnection
BSC010N04LSATMA1 Applications
Industrial
Power Management
Alternative Energy
Motor Drive & Control
