Name: SIR184DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR184DP-T1-RE3
Price: 1.31000 USD
Availability: InStock

new-10%

SIR184DP-T1-RE3

Manufacturer part number:SIR184DP-T1-RE3

Manufacturer:Vishay Siliconix

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 5.8mOhm @ 10A, 10V ±20V 1490pF @ 30V 32nC @ 10V 60V PowerPAK® SO-8

Case Package:SOT-23

Datasheet:SIR184DP-T1-RE3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Supplier Device Package	PowerPAK® SO-8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	TrenchFET® Gen IV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	5W Ta 62.5W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1490pF @ 30V
Current - Continuous Drain (Id) @ 25°C	20.7A Ta 73A Tc
Gate Charge (Qg) (Max) @ Vgs	32nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	7.5V 10V
Vgs (Max)	±20V
Drain to Source Resistance	4.7mOhm
RoHS Status	ROHS3 Compliant

SIR184DP-T1-RE3 Product Details

SIR184DP-T1-RE3 Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1490pF @ 30V.MOSFETs have 4.7mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (7.5V 10V).