IRFP4110PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFP4110PBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2008
Series
HEXFET®
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
4.5MOhm
Terminal Finish
MATTE TIN OVER NICKEL
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
250
[email protected] Reflow Temperature-Max (s)
30
Number of Elements
1
Power Dissipation-Max
370W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
370W
Case Connection
DRAIN
Turn On Delay Time
25 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.5m Ω @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
9620pF @ 50V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
210nC @ 10V
Rise Time
67ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
88 ns
Turn-Off Delay Time
78 ns
Continuous Drain Current (ID)
180A
Threshold Voltage
4V
JEDEC-95 Code
TO-247AC
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
670A
Dual Supply Voltage
100V
Recovery Time
75 ns
Nominal Vgs
4 V
Height
20.7mm
Length
15.87mm
Width
5.3086mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1500 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.78000
$4.78
10
$4.29700
$42.97
400
$3.25140
$1300.56
800
$2.68880
$2151.04
IRFP4110PBF Product Details
IRFP4110PBF Description
IRFP4110PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 100V. The operating temperature of the IRFP4110PBF is -55°C~175°C TJ and its maximum power dissipation is 370W Tc. IRFP4110PBF has 3 pins and it is available in Tube packaging way. The Drain to Source Breakdown Voltage of IRFP4110PBF is 100V.
IRFP4110PBF Features
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
IRFP4110PBF Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
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