Name: HUF75344P3
Brand: ON Semiconductor
SKU: HUF75344P3
Price: 1.51000 USD
Availability: InStock

new-10%

HUF75344P3

Manufacturer part number:HUF75344P3

Manufacturer:ON Semiconductor

Description:N-Channel Tube 8m Ω @ 75A, 10V ±20V 3200pF @ 25V 210nC @ 20V TO-220-3

Case Package:SOT-23

Datasheet:HUF75344P3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Factory Lead Time	9 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	1.8g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	UltraFET™
Published	2004
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Voltage - Rated DC	55V
Current Rating	75A
Number of Elements	1
Power Dissipation-Max	285W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	285W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	210nC @ 20V
Rise Time	125ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	57 ns
Turn-Off Delay Time	46 ns
Continuous Drain Current (ID)	75A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.008Ohm
Drain to Source Breakdown Voltage	55V
Height	16.3mm
Length	10.67mm
Width	4.7mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

HUF75344P3 Product Details

HUF75344P3 Description

The ground-breaking UltraFET manufacturing technique is used to create these N-Channel power MOSFETs. The lowest on-resistance per silicon area is achieved using this cutting-edge process technology, producing exceptional performance. This device has a very low reverse recovery time and stored charge, and it can sustain high energy in avalanche mode. It was created for use in situations where power economy was crucial, including switching converters, switching regulators, motor and relay drivers, low-voltage bus switches, and power management in portable and battery-powered goods.