Welcome to Hotenda.com Online Store!

logo
userjoin
Home

SIR172ADP-T1-GE3

SIR172ADP-T1-GE3

SIR172ADP-T1-GE3

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8.5mOhm @ 10A, 10V ±20V 1515pF @ 15V 44nC @ 10V 30V PowerPAK® SO-8

SOT-23

SIR172ADP-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Supplier Device Package PowerPAK® SO-8
Weight 506.605978mg
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series TrenchFET®
Published 2015
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 8.9mOhm
Max Operating Temperature150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 29.8W Tc
Element ConfigurationSingle
Power Dissipation3.9W
Turn On Delay Time18 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1515pF @ 15V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Rise Time23ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance1.515nF
Drain to Source Resistance 8.5mOhm
Rds On Max 8.5 mΩ
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:14431 items

Pricing & Ordering

QuantityUnit PriceExt. Price

SIR172ADP-T1-GE3 Product Details

SIR172ADP-T1-GE3 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1515pF @ 15V.This device has a continuous drain current (ID) of [24A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 22 ns.MOSFETs have 8.5mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

SIR172ADP-T1-GE3 Features


a continuous drain current (ID) of 24A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 22 ns
single MOSFETs transistor is 8.5mOhm
a 30V drain to source voltage (Vdss)


SIR172ADP-T1-GE3 Applications


There are a lot of Vishay Siliconix
SIR172ADP-T1-GE3 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

Get Subscriber

Enter Your Email Address, Get the Latest News