STF26NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STF26NM60N Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STF26
Pin Count
3
Number of Elements
1
Power Dissipation-Max
35W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
30W
Case Connection
ISOLATED
Turn On Delay Time
13 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
165m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1800pF @ 50V
Current - Continuous Drain (Id) @ 25°C
20A Tc
Gate Charge (Qg) (Max) @ Vgs
60nC @ 10V
Rise Time
25ns
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
50 ns
Turn-Off Delay Time
85 ns
Continuous Drain Current (ID)
10A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain Current-Max (Abs) (ID)
20A
Pulsed Drain Current-Max (IDM)
80A
DS Breakdown Voltage-Min
600V
Nominal Vgs
3 V
Height
16.4mm
Length
10.4mm
Width
4.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1019 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.90000
$7.9
50
$6.43600
$321.8
100
$5.90470
$590.47
500
$4.86866
$2434.33
STF26NM60N Product Details
STF26NM60N Description
STF26NM60N is an N-channel Power MOSFET designed with MDmeshTM technology's second generation. This ground-breaking Power MOSFET combines a vertical structure with the company's strip layout to provide one of the lowest on-resistance and gate charges in the world. As a result, it is appropriate for the most demanding high-efficiency converters.
STF26NM60N Features
100% avalanche tested
Low gate input resistance
Low input capacitance and gate charge
STF26NM60N Applications
Switching applications
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