NTD6416ANLT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTD6416ANLT4G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
74MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
4
JESD-30 Code
R-PDSO-G2
Number of Elements
1
Power Dissipation-Max
71W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
71W
Case Connection
DRAIN
Turn On Delay Time
7 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
74m Ω @ 19A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
19A Tc
Gate Charge (Qg) (Max) @ Vgs
40nC @ 10V
Rise Time
16ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
40 ns
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
19A
Threshold Voltage
2.2V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
70A
Avalanche Energy Rating (Eas)
50 mJ
Nominal Vgs
2.2 V
Height
2.38mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:7326 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.808000
$4.808
10
$4.535849
$45.35849
100
$4.279103
$427.9103
500
$4.036890
$2018.445
1000
$3.808386
$3808.386
NTD6416ANLT4G Product Details
NTD6416ANLT4G Description
NTD6416ANLT4G is a 100v Single N-Channel Logic Level Power MOSFET. The onsemi NTD6416ANLT4G is designed for motor control and UPS Inverter applications due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor NTD6416ANLT4G is in the TO-252-3 package with 71W power dissipation.
NTD6416ANLT4G Features
Low RDS(on)
High Current Capability
100% Avalanche Tested
NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
Pb?Free and are RoHS Compliant
NTD6416ANLT4G Applications
UPS Inverter
AC Motor Applications
DC Motor Applications
Brushless DC Motor Applications
Stepper Motor Applications
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