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SIHB11N80E-GE3

SIHB11N80E-GE3

SIHB11N80E-GE3

Vishay Siliconix

MOSFET N-CH 800V D2PAK TO-263

SOT-23

SIHB11N80E-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK (TO-263)
Operating Temperature-55°C~150°C TJ
Series E
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 179W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 100V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS StatusROHS3 Compliant
In-Stock:3551 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.380114$3.380114
10$3.188787$31.88787
100$3.008289$300.8289
500$2.838009$1419.0045
1000$2.677367$2677.367

About SIHB11N80E-GE3

The SIHB11N80E-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 800V D2PAK TO-263.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SIHB11N80E-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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