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IPB60R070CFD7ATMA1

IPB60R070CFD7ATMA1

IPB60R070CFD7ATMA1

Infineon Technologies

Power Transistor MOSFET N-Channel Enhancement 600V 31A 3-Pin D2PAK T/R

SOT-23

IPB60R070CFD7ATMA1 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature-55°C~150°C TJ
Series CoolMOS™ CFD7
Part StatusActive
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 156W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 70m Ω @ 15.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 760μA
Input Capacitance (Ciss) (Max) @ Vds 2721pF @ 400V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
In-Stock:1133 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.862662$5.862662
10$5.530814$55.30814
100$5.217749$521.7749
500$4.922404$2461.202
1000$4.643778$4643.778

About IPB60R070CFD7ATMA1

The IPB60R070CFD7ATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features Power Transistor MOSFET N-Channel Enhancement 600V 31A 3-Pin D2PAK T/R.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPB60R070CFD7ATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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