Name: BSC082N10LSGATMA1
Brand: Infineon Technologies
SKU: BSC082N10LSGATMA1
Price: 3.30000 USD
Availability: InStock

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BSC082N10LSGATMA1

Manufacturer part number:BSC082N10LSGATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 100V 13.8A 8-Pin TDSON EP

Case Package:SOT-23

Datasheet:BSC082N10LSGATMA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-F5
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	156W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	156W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	2.4V @ 110μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	7400pF @ 50V
Current - Continuous Drain (Id) @ 25°C	13.8A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	104nC @ 10V
Rise Time	24ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	100V
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	377 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead

About BSC082N10LSGATMA1

The BSC082N10LSGATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 100V 13.8A 8-Pin TDSON EP.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the BSC082N10LSGATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.