Welcome to Hotenda.com Online Store!

logo
userjoin
Home

SIE806DF-T1-E3

SIE806DF-T1-E3

SIE806DF-T1-E3

Vishay Siliconix

MOSFET 30V 60A 125W 1.7mohm @ 10V

SOT-23

SIE806DF-T1-E3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 10-PolarPAK® (L)
Number of Pins 10
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2016
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 1.7mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count10
JESD-30 Code R-PDSO-N4
Number of Elements 1
Power Dissipation-Max 5.2W Ta 125W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation5.2W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.7m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13000pF @ 15V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Rise Time50ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 1.3V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 202A
Drain to Source Breakdown Voltage 30V
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4760 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$11.176223$11.176223
10$10.543607$105.43607
100$9.946799$994.6799
500$9.383772$4691.886
1000$8.852616$8852.616

About SIE806DF-T1-E3

The SIE806DF-T1-E3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 30V 60A 125W 1.7mohm @ 10V.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SIE806DF-T1-E3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

Get Subscriber

Enter Your Email Address, Get the Latest News