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IRF1010ESTRR

IRF1010ESTRR

IRF1010ESTRR

Infineon Technologies

MOSFET N-CH 60V 84A D2PAK

SOT-23

IRF1010ESTRR Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2002
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 200W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3210pF @ 25V
Current - Continuous Drain (Id) @ 25°C 84A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusNon-RoHS Compliant
In-Stock:1786 items

About IRF1010ESTRR

The IRF1010ESTRR from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 60V 84A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF1010ESTRR, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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