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IRLR7807ZTRPBF

IRLR7807ZTRPBF

IRLR7807ZTRPBF

Infineon Technologies

IRLR7807ZTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRLR7807ZTRPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2004
Series HEXFET®
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 13.8MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating43A
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 40W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation40W
Case Connection DRAIN
Turn On Delay Time7.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.8m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 780pF @ 15V
Current - Continuous Drain (Id) @ 25°C 43A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Rise Time28ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.5 ns
Turn-Off Delay Time 9.8 ns
Continuous Drain Current (ID) 43A
Threshold Voltage 1.8V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 28 mJ
Recovery Time 35 ns
Nominal Vgs 1.8 V
Height 2.26mm
Length 6.7056mm
Width 6.22mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Contains Lead, Lead Free
In-Stock:3284 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.159949$0.159949
10$0.150895$1.50895
100$0.142354$14.2354
500$0.134296$67.148
1000$0.126694$126.694

IRLR7807ZTRPBF Product Details

IRLR7807ZTRPBF Description


Alex Lidow co-invented the HexFET, a hexagonal type of Power MOSFET, at Stanford University in 1977, along with Tom Herman. The HexFET was commercialized by International Rectifier in 1978.


IRLR7807ZTRPBF Applications


High Frequency Synchronous Buck

Converters for Computer Processor Power

Lead-Free

IRLR7807ZTRPBF Features


Very Low RDS(on) at 4.5V VGS

Ultra-Low Gate Impedance

Fully Characterized Avalanche Voltage

and Current


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