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SIA483DJ-T1-GE3

SIA483DJ-T1-GE3

SIA483DJ-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 12A SC70-6

SOT-23

SIA483DJ-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 2015
Series TrenchFET®
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormNO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count6
JESD-30 Code S-XDSO-N3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.5W Ta 19W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation3.5W
Case Connection DRAIN
Turn On Delay Time10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time60ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) -10A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 40A
Max Junction Temperature (Tj) 150°C
Height 800μm
Length 2.05mm
Width 2.05mm
RoHS StatusROHS3 Compliant
In-Stock:15157 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.962560$0.96256
10$0.908075$9.08075
100$0.856675$85.6675
500$0.808184$404.092
1000$0.762438$762.438

About SIA483DJ-T1-GE3

The SIA483DJ-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET P-CH 30V 12A SC70-6.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SIA483DJ-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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