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IXTH3N200P3HV

IXTH3N200P3HV

IXTH3N200P3HV

IXYS

MOSFET N-CH 2000V 3A TO-247

SOT-23

IXTH3N200P3HV Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2015
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 520W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1860pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Drain to Source Voltage (Vdss) 2000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 3A
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:307 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$27.463226$27.463226
10$25.908704$259.08704
100$24.442173$2444.2173
500$23.058654$11529.327
1000$21.753447$21753.447

About IXTH3N200P3HV

The IXTH3N200P3HV from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 2000V 3A TO-247.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTH3N200P3HV, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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