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DMN2990UFZ-7B

DMN2990UFZ-7B

DMN2990UFZ-7B

Diodes Incorporated

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 990m Ω @ 100mA, 4.5V ±8V 55.2pF @ 16V 0.5nC @ 4.5V 3-XFDFN

SOT-23

DMN2990UFZ-7B Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2015
JESD-609 Code e4
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional FeatureHIGH RELIABILITY
Capacitance 389pF
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal FormNO LEAD
Base Part Number DMN2990
Reference Standard AEC-Q101
Number of Elements 1
Number of Channels 2
Power Dissipation-Max 320mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time3.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 990m Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 55.2pF @ 16V
Current - Continuous Drain (Id) @ 25°C 250mA Ta
Gate Charge (Qg) (Max) @ Vgs 0.5nC @ 4.5V
Rise Time2.1ns
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 7.7 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 250mA
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.99Ohm
Drain to Source Breakdown Voltage 20V
Feedback Cap-Max (Crss) 5.6 pF
RoHS StatusROHS3 Compliant
In-Stock:14597 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.511603$0.511603
10$0.482645$4.82645
100$0.455325$45.5325
500$0.429552$214.776
1000$0.405238$405.238

DMN2990UFZ-7B Product Details

DMN2990UFZ-7B Overview


A device's maximum input capacitance is 55.2pF @ 16V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 250mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=20V, and this device has a drain-to-source breakdown voltage of 20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 22 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 3.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.This device uses no drive voltage (1.2V 4.5V) to reduce its overall power consumption.

DMN2990UFZ-7B Features


a continuous drain current (ID) of 250mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 22 ns


DMN2990UFZ-7B Applications


There are a lot of Diodes Incorporated
DMN2990UFZ-7B applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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