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SI7137DP-T1-GE3

SI7137DP-T1-GE3

SI7137DP-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 60A PPAK SO-8

SOT-23

SI7137DP-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2013
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 1.95mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormC BEND
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Pin Count8
JESD-30 Code R-XDSO-C5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 6.25W Ta 104W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation6.25W
Case Connection DRAIN
Turn On Delay Time100 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.95m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 20000pF @ 10V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 585nC @ 10V
Rise Time150ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 230 ns
Continuous Drain Current (ID) -60A
Threshold Voltage -1.4V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 42A
Drain to Source Breakdown Voltage -20V
Max Junction Temperature (Tj) 150°C
Nominal Vgs -1.4 V
Height 1.12mm
Length 6.15mm
Width 5.15mm
Radiation HardeningNo
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2566 items

Pricing & Ordering

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About SI7137DP-T1-GE3

The SI7137DP-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET P-CH 20V 60A PPAK SO-8.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI7137DP-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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