Name: IPT020N10N3ATMA1
Brand: Infineon Technologies
SKU: IPT020N10N3ATMA1
Price: 10.10000 USD
Availability: InStock

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IPT020N10N3ATMA1

Manufacturer part number:IPT020N10N3ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2m Ω @ 150A, 10V ±20V 11200pF @ 50V 156nC @ 10V 8-PowerSFN

Case Package:SOT-23

Datasheet:IPT020N10N3ATMA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerSFN
Number of Pins	8
Transistor Element Material	SILICON
Manufacturer Package Identifier	PG-HSOF-8
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	OptiMOS™
Published	2012
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	ULTRA LOW RESISTANCE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
Time@Peak Reflow Temperature-Max (s)	40
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	375W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	375W
Case Connection	DRAIN
Turn On Delay Time	34 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2m Ω @ 150A, 10V
Vgs(th) (Max) @ Id	3.5V @ 272μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	11200pF @ 50V
Current - Continuous Drain (Id) @ 25°C	300A Tc
Gate Charge (Qg) (Max) @ Vgs	156nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	84 ns
Continuous Drain Current (ID)	300A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	100V
Drain-source On Resistance-Max	0.02Ohm
Drain to Source Breakdown Voltage	100V
Max Junction Temperature (Tj)	175°C
Height	2.4mm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead

IPT020N10N3ATMA1 Product Details

IPT020N10N3ATMA1 Description

IPT020N10N3ATMA1 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 100V. The operating temperature of the IPT020N10N3ATMA1 is -55°C~175°C TJ and its maximum power dissipation is 375W Tc. IPT020N10N3ATMA1 has 8 pins and it is available in Tape & Reel (TR) packaging way.